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RN2967(TE85L,F)

RN2967(TE85L,F)

For Reference Only

Part Number RN2967(TE85L,F)
PNEDA Part # RN2967-TE85L-F
Description TRANS 2PNP PREBIAS 0.2W US6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 27,612
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 22 - Jun 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN2967(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN2967(TE85L,F)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
RN2967(TE85L, RN2967(TE85L Datasheet (Total Pages: 6, Size: 360.66 KB)
PDFRN2969(TE85L Datasheet Cover
RN2969(TE85L Datasheet Page 2 RN2969(TE85L Datasheet Page 3 RN2969(TE85L Datasheet Page 4 RN2969(TE85L Datasheet Page 5 RN2969(TE85L Datasheet Page 6

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RN2967(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseSC-101, SOT-883
Supplier Device PackageUS6

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