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RP1E125XNTR

RP1E125XNTR

For Reference Only

Part Number RP1E125XNTR
PNEDA Part # RP1E125XNTR
Description MOSFET N-CH 30V 12.5A MPT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RP1E125XNTR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRP1E125XNTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RP1E125XNTR, RP1E125XNTR Datasheet (Total Pages: 7, Size: 523.61 KB)
PDFRP1E125XNTR Datasheet Cover
RP1E125XNTR Datasheet Page 2 RP1E125XNTR Datasheet Page 3 RP1E125XNTR Datasheet Page 4 RP1E125XNTR Datasheet Page 5 RP1E125XNTR Datasheet Page 6 RP1E125XNTR Datasheet Page 7

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RP1E125XNTR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs12mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMPT6
Package / Case6-SMD, Flat Leads

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