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RQ1E100XNTR

RQ1E100XNTR

For Reference Only

Part Number RQ1E100XNTR
PNEDA Part # RQ1E100XNTR
Description MOSFET N-CH 30V 10A TSMT8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 8,514
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ1E100XNTR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ1E100XNTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ1E100XNTR, RQ1E100XNTR Datasheet (Total Pages: 12, Size: 668.3 KB)
PDFRQ1E100XNTR Datasheet Cover
RQ1E100XNTR Datasheet Page 2 RQ1E100XNTR Datasheet Page 3 RQ1E100XNTR Datasheet Page 4 RQ1E100XNTR Datasheet Page 5 RQ1E100XNTR Datasheet Page 6 RQ1E100XNTR Datasheet Page 7 RQ1E100XNTR Datasheet Page 8 RQ1E100XNTR Datasheet Page 9 RQ1E100XNTR Datasheet Page 10 RQ1E100XNTR Datasheet Page 11

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RQ1E100XNTR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.7nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 10V
FET Feature-
Power Dissipation (Max)550mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT8
Package / Case8-SMD, Flat Lead

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