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RQ3E130MNTB1

RQ3E130MNTB1

For Reference Only

Part Number RQ3E130MNTB1
PNEDA Part # RQ3E130MNTB1
Description MOSFET N-CH 30V 13A HSMT8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 22,614
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3E130MNTB1 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3E130MNTB1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3E130MNTB1, RQ3E130MNTB1 Datasheet (Total Pages: 11, Size: 572.62 KB)
PDFRQ3E130MNTB1 Datasheet Cover
RQ3E130MNTB1 Datasheet Page 2 RQ3E130MNTB1 Datasheet Page 3 RQ3E130MNTB1 Datasheet Page 4 RQ3E130MNTB1 Datasheet Page 5 RQ3E130MNTB1 Datasheet Page 6 RQ3E130MNTB1 Datasheet Page 7 RQ3E130MNTB1 Datasheet Page 8 RQ3E130MNTB1 Datasheet Page 9 RQ3E130MNTB1 Datasheet Page 10 RQ3E130MNTB1 Datasheet Page 11

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RQ3E130MNTB1 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.1mOhm @ 13A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds840pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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