RS1E350GNTB
For Reference Only
| Part Number | RS1E350GNTB |
| PNEDA Part # | RS1E350GNTB |
| Description | 4.5V DRIVE NCH MOSFET. POWER MOS |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,830 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RS1E350GNTB Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | RS1E350GNTB |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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RS1E350GNTB Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4060pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
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