Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RSD201N10TL

RSD201N10TL

For Reference Only

Part Number RSD201N10TL
PNEDA Part # RSD201N10TL
Description MOSFET N-CH 100V 20A CPT3
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 53,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RSD201N10TL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRSD201N10TL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RSD201N10TL, RSD201N10TL Datasheet (Total Pages: 15, Size: 833.37 KB)
PDFRSD201N10TL Datasheet Cover
RSD201N10TL Datasheet Page 2 RSD201N10TL Datasheet Page 3 RSD201N10TL Datasheet Page 4 RSD201N10TL Datasheet Page 5 RSD201N10TL Datasheet Page 6 RSD201N10TL Datasheet Page 7 RSD201N10TL Datasheet Page 8 RSD201N10TL Datasheet Page 9 RSD201N10TL Datasheet Page 10 RSD201N10TL Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RSD201N10TL Datasheet
  • where to find RSD201N10TL
  • Rohm Semiconductor

  • Rohm Semiconductor RSD201N10TL
  • RSD201N10TL PDF Datasheet
  • RSD201N10TL Stock

  • RSD201N10TL Pinout
  • Datasheet RSD201N10TL
  • RSD201N10TL Supplier

  • Rohm Semiconductor Distributor
  • RSD201N10TL Price
  • RSD201N10TL Distributor

RSD201N10TL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs46mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2100pF @ 25V
FET Feature-
Power Dissipation (Max)850mW (Ta), 20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCPT3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

SI4322DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 5.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRLR2905PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFSL3107PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 140A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9370pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

162nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15400pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

NTMS4816NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 25V

FET Feature

-

Power Dissipation (Max)

780mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

1N5254B

1N5254B

ON Semiconductor

DIODE ZENER 27V 500MW DO35

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

DG455EY-T1-E3

DG455EY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

ESD9X5.0ST5G

ESD9X5.0ST5G

ON Semiconductor

TVS DIODE 5V 12.3V SOD923

AT-32033-TR1G

AT-32033-TR1G

Broadcom

RF TRANS NPN 5.5V SOT23

PIC12F1612-I/SN

PIC12F1612-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC

3214W-1-502E

3214W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

NLC565050T-100K-PF

NLC565050T-100K-PF

TDK

FIXED IND 10UH 690MA 210 MOHM

STW14NM50

STW14NM50

STMicroelectronics

MOSFET N-CH 550V 14A TO-247

MCP16331T-E/CH

MCP16331T-E/CH

Microchip Technology

IC REG BUCK ADJ 500MA SOT23-6

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

LT1129IQ#PBF

LT1129IQ#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 5DDPAK