Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4322DY-T1-E3

SI4322DY-T1-E3

For Reference Only

Part Number SI4322DY-T1-E3
PNEDA Part # SI4322DY-T1-E3
Description MOSFET N-CH 30V 18A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,452
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4322DY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4322DY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4322DY-T1-E3, SI4322DY-T1-E3 Datasheet (Total Pages: 7, Size: 118.85 KB)
PDFSI4322DY-T1-GE3 Datasheet Cover
SI4322DY-T1-GE3 Datasheet Page 2 SI4322DY-T1-GE3 Datasheet Page 3 SI4322DY-T1-GE3 Datasheet Page 4 SI4322DY-T1-GE3 Datasheet Page 5 SI4322DY-T1-GE3 Datasheet Page 6 SI4322DY-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4322DY-T1-E3 Datasheet
  • where to find SI4322DY-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI4322DY-T1-E3
  • SI4322DY-T1-E3 PDF Datasheet
  • SI4322DY-T1-E3 Stock

  • SI4322DY-T1-E3 Pinout
  • Datasheet SI4322DY-T1-E3
  • SI4322DY-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI4322DY-T1-E3 Price
  • SI4322DY-T1-E3 Distributor

SI4322DY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1640pF @ 15V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 5.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

STB23NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 50V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM3J355R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

30.1mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

16.6nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1030pF @ 10V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23F

Package / Case

SOT-23-3 Flat Leads

SQM120N03-1M5L_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15605pF @ 15V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STL150N3LLH5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.75mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±22V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 25V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

STB6N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.35Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

226pF @ 100V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

SML-310MTT86

SML-310MTT86

Rohm Semiconductor

LED GREEN CLEAR 0603 SMD

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC

MC74HC00ADR2G

MC74HC00ADR2G

ON Semiconductor

IC GATE NAND 4CH 2-INP 14SOIC

EPCQ64SI16N

EPCQ64SI16N

Intel

IC CONFIG DEVICE 64MBIT 16SOIC

LT1308BIS8#TRPBF

LT1308BIS8#TRPBF

Linear Technology/Analog Devices

IC REG BST SEPIC ADJ 2A 8SOIC

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

FDS4935BZ

FDS4935BZ

ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

IRFR5305TRPBF

IRFR5305TRPBF

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

ACS723LLCTR-05AB-T

ACS723LLCTR-05AB-T

Allegro MicroSystems, LLC

SENSOR CURRENT HALL 5A AC/DC

SMF36AT1G

SMF36AT1G

Littelfuse

TVS DIODE 36V 58.1V SOD123FL

NC7SZ08P5X

NC7SZ08P5X

ON Semiconductor

IC GATE AND 1CH 2-INP SC70-5