Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RW1E014SNT2R

RW1E014SNT2R

For Reference Only

Part Number RW1E014SNT2R
PNEDA Part # RW1E014SNT2R
Description MOSFET N-CH 30V 1.4A WEMT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RW1E014SNT2R Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRW1E014SNT2R
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RW1E014SNT2R Datasheet
  • where to find RW1E014SNT2R
  • Rohm Semiconductor

  • Rohm Semiconductor RW1E014SNT2R
  • RW1E014SNT2R PDF Datasheet
  • RW1E014SNT2R Stock

  • RW1E014SNT2R Pinout
  • Datasheet RW1E014SNT2R
  • RW1E014SNT2R Supplier

  • Rohm Semiconductor Distributor
  • RW1E014SNT2R Price
  • RW1E014SNT2R Distributor

RW1E014SNT2R Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs240mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

The Products You May Be Interested In

IPI120N06S403AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13150pF @ 25V

FET Feature

-

Power Dissipation (Max)

167W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3-1

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

AOD4128

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1286pF @ 12V

FET Feature

-

Power Dissipation (Max)

65W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN3333 (3.3x3.3)

Package / Case

8-VDFN Exposed Pad

SIHP33N60EF-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

98mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3454pF @ 100V

FET Feature

-

Power Dissipation (Max)

278W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TSM130NB06LCR

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

37nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2175pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

Recently Sold

HCPL-0531-500E

HCPL-0531-500E

Broadcom

OPTOISO 3.75KV 2CH TRANS 8SOIC

BC847PN-7-F

BC847PN-7-F

Diodes Incorporated

TRANS NPN/PNP 45V 0.1A SOT363

SA555D

SA555D

ON Semiconductor

IC OSC SINGLE TIMER 8-SOP

NC7WZ132K8X

NC7WZ132K8X

ON Semiconductor

IC GATE NAND SCHMITT 2CH US8

MX25U3235FM2I-10G

MX25U3235FM2I-10G

Macronix

IC FLASH 32M SPI 104MHZ 8SOP

LTM4623IY#PBF

LTM4623IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 3A

AD8033ARZ

AD8033ARZ

Analog Devices

IC OPAMP VFB 1 CIRCUIT 8SOIC

4608X-101-102LF

4608X-101-102LF

Bourns

RES ARRAY 7 RES 1K OHM 8SIP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

PA2512FKE7W0R002E

PA2512FKE7W0R002E

Yageo

METAL CURRENT SENSOR 2512 1% 50P

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON