S34MS01G100BHI003
For Reference Only
| Part Number | S34MS01G100BHI003 |
| PNEDA Part # | S34MS01G100BHI003_33 |
| Description | IC FLASH 1G PARALLEL 63BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 37,963 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S34MS01G100BHI003 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S34MS01G100BHI003 |
| Category | Semiconductors › Memory ICs › Memory |
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S34MS01G100BHI003 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | MS-1 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-BGA (11x9) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -55°C ~ 125°C (TA) Mounting Type Through Hole Package / Case 28-CDIP (0.300", 7.62mm) Supplier Device Package 28-CDIP |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 4Mb (256K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ns Access Time 10ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-VFBGA Supplier Device Package 48-VFBGA (6x8) |
Manufacturer Cypress Semiconductor Corp Series MoBL® Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mb (128K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 70ns Access Time 70ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 32-SOIC (0.445", 11.30mm Width) Supplier Device Package 32-SOIC |
