SE30PAD-M3/I
For Reference Only
| Part Number | SE30PAD-M3/I |
| PNEDA Part # | SE30PAD-M3-I |
| Description | DIODE GEN PURP 200V 3A DO221BC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 8,352 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SE30PAD-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SE30PAD-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SE30PAD-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.16V @ 3A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.3µs |
| Current - Reverse Leakage @ Vr | 5µA @ 200V |
| Capacitance @ Vr, F | 13pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-221BC, SMA Flat Leads Exposed Pad |
| Supplier Device Package | DO-221BC (SMPA) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Powerex Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 250A Voltage - Forward (Vf) (Max) @ If 2V @ 800A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1µs Current - Reverse Leakage @ Vr 50mA @ 1200V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-205AB, DO-9, Stud Supplier Device Package DO-205AB, DO-9 Operating Temperature - Junction -45°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 750mV @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 60V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction -55°C ~ 150°C |
