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SI1022R-T1-GE3

SI1022R-T1-GE3

For Reference Only

Part Number SI1022R-T1-GE3
PNEDA Part # SI1022R-T1-GE3
Description MOSFET N-CH 60V 330MA SC-75A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1022R-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1022R-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1022R-T1-GE3, SI1022R-T1-GE3 Datasheet (Total Pages: 7, Size: 149.38 KB)
PDFSI1022R-T1-E3 Datasheet Cover
SI1022R-T1-E3 Datasheet Page 2 SI1022R-T1-E3 Datasheet Page 3 SI1022R-T1-E3 Datasheet Page 4 SI1022R-T1-E3 Datasheet Page 5 SI1022R-T1-E3 Datasheet Page 6 SI1022R-T1-E3 Datasheet Page 7

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SI1022R-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.6nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
FET Feature-
Power Dissipation (Max)250mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75A
Package / CaseSC-75A

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