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SIDR608DP-T1-RE3

SIDR608DP-T1-RE3

For Reference Only

Part Number SIDR608DP-T1-RE3
PNEDA Part # SIDR608DP-T1-RE3
Description MOSFET N-CH 45V PP SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 12 - Jul 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR608DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR608DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR608DP-T1-RE3, SIDR608DP-T1-RE3 Datasheet (Total Pages: 9, Size: 220.4 KB)
PDFSIDR608DP-T1-RE3 Datasheet Cover
SIDR608DP-T1-RE3 Datasheet Page 2 SIDR608DP-T1-RE3 Datasheet Page 3 SIDR608DP-T1-RE3 Datasheet Page 4 SIDR608DP-T1-RE3 Datasheet Page 5 SIDR608DP-T1-RE3 Datasheet Page 6 SIDR608DP-T1-RE3 Datasheet Page 7 SIDR608DP-T1-RE3 Datasheet Page 8 SIDR608DP-T1-RE3 Datasheet Page 9

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SIDR608DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)45V
Current - Continuous Drain (Id) @ 25°C51A (Ta), 208A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs167nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds8900pF @ 20V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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