SI1026X-T1-E3
For Reference Only
| Part Number | SI1026X-T1-E3 |
| PNEDA Part # | SI1026X-T1-E3 |
| Description | MOSFET 2N-CH 60V 0.305A SOT563F |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,074 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI1026X-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI1026X-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI1026X-T1-E3 Datasheet
- where to find SI1026X-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI1026X-T1-E3
- SI1026X-T1-E3 PDF Datasheet
- SI1026X-T1-E3 Stock
- SI1026X-T1-E3 Pinout
- Datasheet SI1026X-T1-E3
- SI1026X-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI1026X-T1-E3 Price
- SI1026X-T1-E3 Distributor
SI1026X-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 305mA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Power - Max | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SC-89-6 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 225mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 95pF @ 15V Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) |
Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 53A Rds On (Max) @ Id, Vgs 20mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V Power - Max 180W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-5 Supplier Device Package ISOPLUS i4-PAC™ |
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 22A Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V Power - Max 390W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer Series NexFET™ FET Type 2 N-Channel (Half Bridge) FET Feature Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Rds On (Max) @ Id, Vgs 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 1.9V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 45V, 7.4nC @ 45V Input Capacitance (Ciss) (Max) @ Vds 494pF @ 12.5V, 970pF @ 12.5V Power - Max 6W Operating Temperature -55°C ~ 125°C Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-VSON (3.3x3.3) |
