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SI1035X-T1-GE3

SI1035X-T1-GE3

For Reference Only

Part Number SI1035X-T1-GE3
PNEDA Part # SI1035X-T1-GE3
Description MOSFET N/P-CH 20V SC-89
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 92,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1035X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1035X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1035X-T1-GE3, SI1035X-T1-GE3 Datasheet (Total Pages: 10, Size: 157.1 KB)
PDFSI1035X-T1-E3 Datasheet Cover
SI1035X-T1-E3 Datasheet Page 2 SI1035X-T1-E3 Datasheet Page 3 SI1035X-T1-E3 Datasheet Page 4 SI1035X-T1-E3 Datasheet Page 5 SI1035X-T1-E3 Datasheet Page 6 SI1035X-T1-E3 Datasheet Page 7 SI1035X-T1-E3 Datasheet Page 8 SI1035X-T1-E3 Datasheet Page 9 SI1035X-T1-E3 Datasheet Page 10

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SI1035X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C180mA, 145mA
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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