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SI1411DH-T1-GE3

SI1411DH-T1-GE3

For Reference Only

Part Number SI1411DH-T1-GE3
PNEDA Part # SI1411DH-T1-GE3
Description MOSFET P-CH 150V 420MA SC70
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 46,350
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1411DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1411DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1411DH-T1-GE3, SI1411DH-T1-GE3 Datasheet (Total Pages: 11, Size: 267.03 KB)
PDFSI1411DH-T1-GE3 Datasheet Cover
SI1411DH-T1-GE3 Datasheet Page 2 SI1411DH-T1-GE3 Datasheet Page 3 SI1411DH-T1-GE3 Datasheet Page 4 SI1411DH-T1-GE3 Datasheet Page 5 SI1411DH-T1-GE3 Datasheet Page 6 SI1411DH-T1-GE3 Datasheet Page 7 SI1411DH-T1-GE3 Datasheet Page 8 SI1411DH-T1-GE3 Datasheet Page 9 SI1411DH-T1-GE3 Datasheet Page 10 SI1411DH-T1-GE3 Datasheet Page 11

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SI1411DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs6.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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