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SI1417EDH-T1-E3

SI1417EDH-T1-E3

For Reference Only

Part Number SI1417EDH-T1-E3
PNEDA Part # SI1417EDH-T1-E3
Description MOSFET P-CH 12V 2.7A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1417EDH-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1417EDH-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1417EDH-T1-E3, SI1417EDH-T1-E3 Datasheet (Total Pages: 6, Size: 109.7 KB)
PDFSI1417EDH-T1-GE3 Datasheet Cover
SI1417EDH-T1-GE3 Datasheet Page 2 SI1417EDH-T1-GE3 Datasheet Page 3 SI1417EDH-T1-GE3 Datasheet Page 4 SI1417EDH-T1-GE3 Datasheet Page 5 SI1417EDH-T1-GE3 Datasheet Page 6

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SI1417EDH-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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