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SI1443EDH-T1-GE3

SI1443EDH-T1-GE3

For Reference Only

Part Number SI1443EDH-T1-GE3
PNEDA Part # SI1443EDH-T1-GE3
Description MOSFET P-CH 30V 4A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 29,952
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1443EDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1443EDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1443EDH-T1-GE3, SI1443EDH-T1-GE3 Datasheet (Total Pages: 12, Size: 265.56 KB)
PDFSI1443EDH-T1-GE3 Datasheet Cover
SI1443EDH-T1-GE3 Datasheet Page 2 SI1443EDH-T1-GE3 Datasheet Page 3 SI1443EDH-T1-GE3 Datasheet Page 4 SI1443EDH-T1-GE3 Datasheet Page 5 SI1443EDH-T1-GE3 Datasheet Page 6 SI1443EDH-T1-GE3 Datasheet Page 7 SI1443EDH-T1-GE3 Datasheet Page 8 SI1443EDH-T1-GE3 Datasheet Page 9 SI1443EDH-T1-GE3 Datasheet Page 10 SI1443EDH-T1-GE3 Datasheet Page 11

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SI1443EDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs54mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.6W (Ta), 2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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