Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1450DH-T1-E3

SI1450DH-T1-E3

For Reference Only

Part Number SI1450DH-T1-E3
PNEDA Part # SI1450DH-T1-E3
Description MOSFET N-CH 8V 4.53A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,874
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1450DH-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1450DH-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1450DH-T1-E3, SI1450DH-T1-E3 Datasheet (Total Pages: 7, Size: 127.6 KB)
PDFSI1450DH-T1-E3 Datasheet Cover
SI1450DH-T1-E3 Datasheet Page 2 SI1450DH-T1-E3 Datasheet Page 3 SI1450DH-T1-E3 Datasheet Page 4 SI1450DH-T1-E3 Datasheet Page 5 SI1450DH-T1-E3 Datasheet Page 6 SI1450DH-T1-E3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1450DH-T1-E3 Datasheet
  • where to find SI1450DH-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI1450DH-T1-E3
  • SI1450DH-T1-E3 PDF Datasheet
  • SI1450DH-T1-E3 Stock

  • SI1450DH-T1-E3 Pinout
  • Datasheet SI1450DH-T1-E3
  • SI1450DH-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI1450DH-T1-E3 Price
  • SI1450DH-T1-E3 Distributor

SI1450DH-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4.53A (Ta), 6.04A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs47mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.05nC @ 5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 4V
FET Feature-
Power Dissipation (Max)1.56W (Ta), 2.78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

The Products You May Be Interested In

IRFB7540PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 65A, 10V

Vgs(th) (Max) @ Id

3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4555pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

PH2925U,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

3mOhm @ 25A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

92nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

6150pF @ 10V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

Manufacturer

IXYS

Series

GigaMOS™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

19000pF @ 25V

FET Feature

-

Power Dissipation (Max)

445W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DE475

Package / Case

DE475

STB21NM60N-1

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 50V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFR9N20DTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

560pF @ 25V

FET Feature

-

Power Dissipation (Max)

86W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

S34ML08G101BHI000

S34ML08G101BHI000

SkyHigh Memory Limited

IC FLASH 8G PARALLEL 63BGA

16SVPF180M

16SVPF180M

Panasonic Electronic Components

CAP ALUM POLY 180UF 20% 16V SMD

7A-8.000MAAE-T

7A-8.000MAAE-T

TXC

CRYSTAL 8.0000MHZ 12PF SMD

MAX1308ECM+

MAX1308ECM+

Maxim Integrated

IC ADC 12BIT SAR 48LQFP/48TQFP

CK45-R3DD102KAVRA

CK45-R3DD102KAVRA

TDK

CAP CER 1000PF 2KV RADIAL

HSMS-2862-TR1G

HSMS-2862-TR1G

Broadcom

RF DIODE SCHOTTKY 4V SOT23-3

IHLP2525CZERR10M01

IHLP2525CZERR10M01

Vishay Dale

FIXED IND 100NH 32.5A 1.7 MOHM

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

NLV32T-068J-EF

NLV32T-068J-EF

TDK

FIXED IND 68NH 450MA 360 MOHM

ZHCS1000TA

ZHCS1000TA

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

39213150000

39213150000

Littelfuse

FUSE BRD MNT 3.15A 250VAC RADIAL

LTC2943IDD

LTC2943IDD

Linear Technology/Analog Devices

IC SUPERVISOR