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SI1903DL-T1-GE3

SI1903DL-T1-GE3

For Reference Only

Part Number SI1903DL-T1-GE3
PNEDA Part # SI1903DL-T1-GE3
Description MOSFET 2P-CH 20V 0.41A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1903DL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1903DL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1903DL-T1-GE3, SI1903DL-T1-GE3 Datasheet (Total Pages: 5, Size: 106.33 KB)
PDFSI1903DL-T1-GE3 Datasheet Cover
SI1903DL-T1-GE3 Datasheet Page 2 SI1903DL-T1-GE3 Datasheet Page 3 SI1903DL-T1-GE3 Datasheet Page 4 SI1903DL-T1-GE3 Datasheet Page 5

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SI1903DL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C410mA
Rds On (Max) @ Id, Vgs995mOhm @ 410mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max270mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

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