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SI3590DV-T1-GE3

SI3590DV-T1-GE3

For Reference Only

Part Number SI3590DV-T1-GE3
PNEDA Part # SI3590DV-T1-GE3
Description MOSFET N/P-CH 30V 2.5A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 29,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3590DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3590DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3590DV-T1-GE3, SI3590DV-T1-GE3 Datasheet (Total Pages: 13, Size: 232.53 KB)
PDFSI3590DV-T1-GE3 Datasheet Cover
SI3590DV-T1-GE3 Datasheet Page 2 SI3590DV-T1-GE3 Datasheet Page 3 SI3590DV-T1-GE3 Datasheet Page 4 SI3590DV-T1-GE3 Datasheet Page 5 SI3590DV-T1-GE3 Datasheet Page 6 SI3590DV-T1-GE3 Datasheet Page 7 SI3590DV-T1-GE3 Datasheet Page 8 SI3590DV-T1-GE3 Datasheet Page 9 SI3590DV-T1-GE3 Datasheet Page 10 SI3590DV-T1-GE3 Datasheet Page 11

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SI3590DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.5A, 1.7A
Rds On (Max) @ Id, Vgs77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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