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SI3905DV-T1-GE3

SI3905DV-T1-GE3

For Reference Only

Part Number SI3905DV-T1-GE3
PNEDA Part # SI3905DV-T1-GE3
Description MOSFET 2P-CH 8V 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3905DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3905DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3905DV-T1-GE3, SI3905DV-T1-GE3 Datasheet (Total Pages: 6, Size: 104.1 KB)
PDFSI3905DV-T1-GE3 Datasheet Cover
SI3905DV-T1-GE3 Datasheet Page 2 SI3905DV-T1-GE3 Datasheet Page 3 SI3905DV-T1-GE3 Datasheet Page 4 SI3905DV-T1-GE3 Datasheet Page 5 SI3905DV-T1-GE3 Datasheet Page 6

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SI3905DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.15W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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