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SI3983DV-T1-GE3

SI3983DV-T1-GE3

For Reference Only

Part Number SI3983DV-T1-GE3
PNEDA Part # SI3983DV-T1-GE3
Description MOSFET 2P-CH 20V 2.1A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3983DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3983DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3983DV-T1-GE3, SI3983DV-T1-GE3 Datasheet (Total Pages: 6, Size: 105.95 KB)
PDFSI3983DV-T1-GE3 Datasheet Cover
SI3983DV-T1-GE3 Datasheet Page 2 SI3983DV-T1-GE3 Datasheet Page 3 SI3983DV-T1-GE3 Datasheet Page 4 SI3983DV-T1-GE3 Datasheet Page 5 SI3983DV-T1-GE3 Datasheet Page 6

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SI3983DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.1A
Rds On (Max) @ Id, Vgs110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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