Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4354DY-T1-E3

SI4354DY-T1-E3

For Reference Only

Part Number SI4354DY-T1-E3
PNEDA Part # SI4354DY-T1-E3
Description MOSFET N-CH 30V 9.5A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,010
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4354DY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4354DY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4354DY-T1-E3, SI4354DY-T1-E3 Datasheet (Total Pages: 6, Size: 89.57 KB)
PDFSI4354DY-T1-GE3 Datasheet Cover
SI4354DY-T1-GE3 Datasheet Page 2 SI4354DY-T1-GE3 Datasheet Page 3 SI4354DY-T1-GE3 Datasheet Page 4 SI4354DY-T1-GE3 Datasheet Page 5 SI4354DY-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4354DY-T1-E3 Datasheet
  • where to find SI4354DY-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI4354DY-T1-E3
  • SI4354DY-T1-E3 PDF Datasheet
  • SI4354DY-T1-E3 Stock

  • SI4354DY-T1-E3 Pinout
  • Datasheet SI4354DY-T1-E3
  • SI4354DY-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI4354DY-T1-E3 Price
  • SI4354DY-T1-E3 Distributor

SI4354DY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

840mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

440mOhm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.65nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

37pF @ 25V

FET Feature

-

Power Dissipation (Max)

530mW (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75

Package / Case

SC-75, SOT-416

FDN306P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 2.6A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1138pF @ 6V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRF9540NSTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

117mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

ZXMN3F30FHTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

318pF @ 15V

FET Feature

-

Power Dissipation (Max)

950mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 19A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13500pF @ 25V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS264™

Package / Case

ISOPLUS264™

Recently Sold

MAX1853EXT

MAX1853EXT

Maxim Integrated

IC REG CHARGE PUMP INV SC70-6

ISL3152EIPZ

ISL3152EIPZ

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8DIP

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

AQY210S

AQY210S

Panasonic Electric Works

SSR RELAY SPST-NO 120MA 0-350V

PCF8575TS/1,112

PCF8575TS/1,112

NXP

IC I/O EXPANDER I2C 16B 24SSOP

IHLP4040DZERR56M11

IHLP4040DZERR56M11

Vishay Dale

FIXED IND 560NH 32A 1.8 MOHM SMD

AT89S52-24AUR

AT89S52-24AUR

Microchip Technology

IC MCU 8BIT 8KB FLASH 44TQFP

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

ATMEGA168PA-MUR

ATMEGA168PA-MUR

Microchip Technology

IC MCU 8BIT 16KB FLASH 32VQFN

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN