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SI4666DY-T1-GE3

SI4666DY-T1-GE3

For Reference Only

Part Number SI4666DY-T1-GE3
PNEDA Part # SI4666DY-T1-GE3
Description MOSFET N-CH 25V 16.5A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,730
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4666DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4666DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4666DY-T1-GE3, SI4666DY-T1-GE3 Datasheet (Total Pages: 9, Size: 191.94 KB)
PDFSI4666DY-T1-GE3 Datasheet Cover
SI4666DY-T1-GE3 Datasheet Page 2 SI4666DY-T1-GE3 Datasheet Page 3 SI4666DY-T1-GE3 Datasheet Page 4 SI4666DY-T1-GE3 Datasheet Page 5 SI4666DY-T1-GE3 Datasheet Page 6 SI4666DY-T1-GE3 Datasheet Page 7 SI4666DY-T1-GE3 Datasheet Page 8 SI4666DY-T1-GE3 Datasheet Page 9

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SI4666DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1145pF @ 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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