Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4686DY-T1-GE3

SI4686DY-T1-GE3

For Reference Only

Part Number SI4686DY-T1-GE3
PNEDA Part # SI4686DY-T1-GE3
Description MOSFET N-CH 30V 18.2A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4686DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4686DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4686DY-T1-GE3, SI4686DY-T1-GE3 Datasheet (Total Pages: 9, Size: 167.86 KB)
PDFSI4686DY-T1-GE3 Datasheet Cover
SI4686DY-T1-GE3 Datasheet Page 2 SI4686DY-T1-GE3 Datasheet Page 3 SI4686DY-T1-GE3 Datasheet Page 4 SI4686DY-T1-GE3 Datasheet Page 5 SI4686DY-T1-GE3 Datasheet Page 6 SI4686DY-T1-GE3 Datasheet Page 7 SI4686DY-T1-GE3 Datasheet Page 8 SI4686DY-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4686DY-T1-GE3 Datasheet
  • where to find SI4686DY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4686DY-T1-GE3
  • SI4686DY-T1-GE3 PDF Datasheet
  • SI4686DY-T1-GE3 Stock

  • SI4686DY-T1-GE3 Pinout
  • Datasheet SI4686DY-T1-GE3
  • SI4686DY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4686DY-T1-GE3 Price
  • SI4686DY-T1-GE3 Distributor

SI4686DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®, WFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1220pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Ta), 5.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

IXTQ50N25T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Manufacturer

IXYS

Series

TrenchT4™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

660A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.85mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

860nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

44000pF @ 25V

FET Feature

Current Sensing

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

STD19N3LLH6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

33mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.7nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

321pF @ 25V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6623TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ ST

Package / Case

DirectFET™ Isometric ST

AOD3N50_002

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

331pF @ 25V

FET Feature

-

Power Dissipation (Max)

57W (Tc)

Operating Temperature

-50°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

AT-32033-TR1G

AT-32033-TR1G

Broadcom

RF TRANS NPN 5.5V SOT23

XC7Z045-2FFG676I

XC7Z045-2FFG676I

Xilinx

IC SOC CORTEX-A9 800MHZ 676FCBGA

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

HLMP-P505

HLMP-P505

Broadcom

LED GREEN CLEAR AXIAL T/H AXIAL

EN63A0QI

EN63A0QI

Intel

DC DC CONVERTER 0.6-5.4V 65W

KA7810AETU

KA7810AETU

ON Semiconductor

IC REG LINEAR 10V 1A TO220-3

DSPIC30F4013-30I/PT

DSPIC30F4013-30I/PT

Microchip Technology

IC MCU 16BIT 48KB FLASH 44TQFP

TJA1052IT/5Y

TJA1052IT/5Y

NXP

DGTL ISOLATOR 5KV 2CH CAN 16SO

SS36FA

SS36FA

ON Semiconductor

DIODE SCHOTTKY 60V 3A SOD123FA

1206L110THYR

1206L110THYR

Littelfuse

PTC RESET FUSE 8V 1.1A 1206

ADV7182WBCPZ

ADV7182WBCPZ

Analog Devices

IC VIDEO DECODER SDTV 32-LFCSP

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312