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SI4814BDY-T1-GE3

SI4814BDY-T1-GE3

For Reference Only

Part Number SI4814BDY-T1-GE3
PNEDA Part # SI4814BDY-T1-GE3
Description MOSFET 2N-CH 30V 10A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,166
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4814BDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4814BDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4814BDY-T1-GE3, SI4814BDY-T1-GE3 Datasheet (Total Pages: 12, Size: 193.63 KB)
PDFSI4814BDY-T1-GE3 Datasheet Cover
SI4814BDY-T1-GE3 Datasheet Page 2 SI4814BDY-T1-GE3 Datasheet Page 3 SI4814BDY-T1-GE3 Datasheet Page 4 SI4814BDY-T1-GE3 Datasheet Page 5 SI4814BDY-T1-GE3 Datasheet Page 6 SI4814BDY-T1-GE3 Datasheet Page 7 SI4814BDY-T1-GE3 Datasheet Page 8 SI4814BDY-T1-GE3 Datasheet Page 9 SI4814BDY-T1-GE3 Datasheet Page 10 SI4814BDY-T1-GE3 Datasheet Page 11

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SI4814BDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A, 10.5A
Rds On (Max) @ Id, Vgs18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max3.3W, 3.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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