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SI4900DY-T1-GE3

SI4900DY-T1-GE3

For Reference Only

Part Number SI4900DY-T1-GE3
PNEDA Part # SI4900DY-T1-GE3
Description MOSFET 2N-CH 60V 5.3A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 21,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4900DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4900DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4900DY-T1-GE3, SI4900DY-T1-GE3 Datasheet (Total Pages: 9, Size: 166.7 KB)
PDFSI4900DY-T1-GE3 Datasheet Cover
SI4900DY-T1-GE3 Datasheet Page 2 SI4900DY-T1-GE3 Datasheet Page 3 SI4900DY-T1-GE3 Datasheet Page 4 SI4900DY-T1-GE3 Datasheet Page 5 SI4900DY-T1-GE3 Datasheet Page 6 SI4900DY-T1-GE3 Datasheet Page 7 SI4900DY-T1-GE3 Datasheet Page 8 SI4900DY-T1-GE3 Datasheet Page 9

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SI4900DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.3A
Rds On (Max) @ Id, Vgs58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds665pF @ 15V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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