SI4914DY-T1-E3

For Reference Only
Part Number | SI4914DY-T1-E3 |
PNEDA Part # | SI4914DY-T1-E3 |
Description | MOSFET 2N-CH 30V 5.5A 8-SOIC |
Manufacturer | Vishay Siliconix |
Unit Price | Request a Quote |
In Stock | 3,600 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
SI4914DY-T1-E3 Resources
Brand | Vishay Siliconix |
ECAD Module |
![]() |
Mfr. Part Number | SI4914DY-T1-E3 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Datasheet |
Payment Method






- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode





- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4914DY-T1-E3 Datasheet
- where to find SI4914DY-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI4914DY-T1-E3
- SI4914DY-T1-E3 PDF Datasheet
- SI4914DY-T1-E3 Stock
- SI4914DY-T1-E3 Pinout
- Datasheet SI4914DY-T1-E3
- SI4914DY-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI4914DY-T1-E3 Price
- SI4914DY-T1-E3 Distributor
SI4914DY-T1-E3 Specifications
Manufacturer | Vishay Siliconix |
Series | LITTLE FOOT® |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.5A, 5.7A |
Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W, 1.16W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
The Products You May Be Interested In
Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 53A Rds On (Max) @ Id, Vgs 20mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 25V Power - Max 180W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case i4-Pac™-5 Supplier Device Package ISOPLUS i4-PAC™ |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 360mA Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 46pF @ 25V Power - Max 310mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.1A Rds On (Max) @ Id, Vgs 215mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V Power - Max 600mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel Complementary FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.2A (Ta), 4.7A (Ta) Rds On (Max) @ Id, Vgs 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 1V @ 250mA (Min) Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 770pF @ 40V, 1000pF @ 20V Power - Max 2.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Sanken Series - FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 550mOhm @ 2A, 4V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 150pF @ 10V Power - Max 5W Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case 12-SIP Supplier Device Package 12-SIP w/fin |