SI4946BEY-T1-GE3
For Reference Only
| Part Number | SI4946BEY-T1-GE3 |
| PNEDA Part # | SI4946BEY-T1-GE3 |
| Description | MOSFET 2N-CH 60V 6.5A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 50,814 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SI4946BEY-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SI4946BEY-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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SI4946BEY-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Power - Max | 3.7W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.1A, 3.4A Rds On (Max) @ Id, Vgs 50mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
