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SI5504DC-T1-GE3

SI5504DC-T1-GE3

For Reference Only

Part Number SI5504DC-T1-GE3
PNEDA Part # SI5504DC-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N/P-CH 30V 2.9A 1206-8
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 8,460
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jul 31 - Aug 5 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI5504DC-T1-GE3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSI5504DC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5504DC-T1-GE3, SI5504DC-T1-GE3 Datasheet (Total Pages: 8, Size: 120.21 KB)
PDFSI5504DC-T1-GE3 Datasheet Cover
SI5504DC-T1-GE3 Datasheet Page 2 SI5504DC-T1-GE3 Datasheet Page 3 SI5504DC-T1-GE3 Datasheet Page 4 SI5504DC-T1-GE3 Datasheet Page 5 SI5504DC-T1-GE3 Datasheet Page 6 SI5504DC-T1-GE3 Datasheet Page 7 SI5504DC-T1-GE3 Datasheet Page 8

SI5504DC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.1A
Rds On (Max) @ Id, Vgs85mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

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