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SI5449DC-T1-GE3

SI5449DC-T1-GE3

For Reference Only

Part Number SI5449DC-T1-GE3
PNEDA Part # SI5449DC-T1-GE3
Description MOSFET P-CH 30V 3.1A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5449DC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5449DC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5449DC-T1-GE3, SI5449DC-T1-GE3 Datasheet (Total Pages: 5, Size: 90.25 KB)
PDFSI5449DC-T1-GE3 Datasheet Cover
SI5449DC-T1-GE3 Datasheet Page 2 SI5449DC-T1-GE3 Datasheet Page 3 SI5449DC-T1-GE3 Datasheet Page 4 SI5449DC-T1-GE3 Datasheet Page 5

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SI5449DC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package1206-8 ChipFET™
Package / Case8-SMD, Flat Lead

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