SI5915BDC-T1-GE3
For Reference Only
| Part Number | SI5915BDC-T1-GE3 |
| PNEDA Part # | SI5915BDC-T1-GE3 |
| Description | MOSFET 2P-CH 8V 4A 1206-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,640 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI5915BDC-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI5915BDC-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI5915BDC-T1-GE3 Datasheet
- where to find SI5915BDC-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI5915BDC-T1-GE3
- SI5915BDC-T1-GE3 PDF Datasheet
- SI5915BDC-T1-GE3 Stock
- SI5915BDC-T1-GE3 Pinout
- Datasheet SI5915BDC-T1-GE3
- SI5915BDC-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI5915BDC-T1-GE3 Price
- SI5915BDC-T1-GE3 Distributor
SI5915BDC-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 4V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 18A Rds On (Max) @ Id, Vgs 540mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V Power - Max 357W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.3A, 4A Rds On (Max) @ Id, Vgs 35mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 15V Power - Max 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 720mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V Power - Max 520W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 42mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 20V Power - Max 17.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 9.5A, 38A Rds On (Max) @ Id, Vgs 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V, 1100pF @ 40V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
