Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5935CDC-T1-GE3

SI5935CDC-T1-GE3

For Reference Only

Part Number SI5935CDC-T1-GE3
PNEDA Part # SI5935CDC-T1-GE3
Description MOSFET 2P-CH 20V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 219,060
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5935CDC-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5935CDC-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5935CDC-T1-GE3, SI5935CDC-T1-GE3 Datasheet (Total Pages: 11, Size: 244.04 KB)
PDFSI5935CDC-T1-E3 Datasheet Cover
SI5935CDC-T1-E3 Datasheet Page 2 SI5935CDC-T1-E3 Datasheet Page 3 SI5935CDC-T1-E3 Datasheet Page 4 SI5935CDC-T1-E3 Datasheet Page 5 SI5935CDC-T1-E3 Datasheet Page 6 SI5935CDC-T1-E3 Datasheet Page 7 SI5935CDC-T1-E3 Datasheet Page 8 SI5935CDC-T1-E3 Datasheet Page 9 SI5935CDC-T1-E3 Datasheet Page 10 SI5935CDC-T1-E3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI5935CDC-T1-GE3 Datasheet
  • where to find SI5935CDC-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI5935CDC-T1-GE3
  • SI5935CDC-T1-GE3 PDF Datasheet
  • SI5935CDC-T1-GE3 Stock

  • SI5935CDC-T1-GE3 Pinout
  • Datasheet SI5935CDC-T1-GE3
  • SI5935CDC-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI5935CDC-T1-GE3 Price
  • SI5935CDC-T1-GE3 Distributor

SI5935CDC-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A
Rds On (Max) @ Id, Vgs100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

The Products You May Be Interested In

SI6968BEDQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A

Rds On (Max) @ Id, Vgs

22mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SQJB00EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

Power - Max

48W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

PMDT290UNEYL

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Rds On (Max) @ Id, Vgs

380mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 10V

Power - Max

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

AO4852L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

90mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 30V

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

APTMC120TAM34CT3AG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

6 N-Channel (3-Phase Bridge)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

74A (Tc)

Rds On (Max) @ Id, Vgs

34mOhm @ 50A, 20V

Vgs(th) (Max) @ Id

4V @ 15mA

Gate Charge (Qg) (Max) @ Vgs

161nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

2788pF @ 1000V

Power - Max

375W

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

SP3

Recently Sold

7427931

7427931

Wurth Electronics

FERRITE BEAD 91 OHM 2SMD 1LN

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC

AD8505ARJZ-R7

AD8505ARJZ-R7

Analog Devices

IC OPAMP GP 1 CIRCUIT SOT23-5

SMBJ14CA

SMBJ14CA

Littelfuse

TVS DIODE 14V 23.2V DO214AA

TIP42CTU

TIP42CTU

ON Semiconductor

TRANS PNP 100V 6A TO-220

EPM2210F324I5N

EPM2210F324I5N

Intel

IC CPLD 1700MC 7NS 324FBGA

CM2009-00QR

CM2009-00QR

ON Semiconductor

VGA PORT COMPANION-65 OHM QSOP16

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

BZT52C8V2S-7-F

BZT52C8V2S-7-F

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

MAX791ESE+T

MAX791ESE+T

Maxim Integrated

IC SUPERVISOR MPU 16-SOIC

BAT46WJ,115

BAT46WJ,115

Nexperia

DIODE SCHOTTKY 100V 250MA SOD323

NR6028T100M

NR6028T100M

Taiyo Yuden

FIXED IND 10UH 1.9A 84.5 MOHM