Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI6968BEDQ-T1-GE3

SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3

For Reference Only

Part Number SI6968BEDQ-T1-GE3
PNEDA Part # SI6968BEDQ-T1-GE3
Description MOSFET 2N-CH 20V 5.2A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6968BEDQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6968BEDQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6968BEDQ-T1-GE3, SI6968BEDQ-T1-GE3 Datasheet (Total Pages: 11, Size: 227.98 KB)
PDFSI6968BEDQ-T1-GE3 Datasheet Cover
SI6968BEDQ-T1-GE3 Datasheet Page 2 SI6968BEDQ-T1-GE3 Datasheet Page 3 SI6968BEDQ-T1-GE3 Datasheet Page 4 SI6968BEDQ-T1-GE3 Datasheet Page 5 SI6968BEDQ-T1-GE3 Datasheet Page 6 SI6968BEDQ-T1-GE3 Datasheet Page 7 SI6968BEDQ-T1-GE3 Datasheet Page 8 SI6968BEDQ-T1-GE3 Datasheet Page 9 SI6968BEDQ-T1-GE3 Datasheet Page 10 SI6968BEDQ-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI6968BEDQ-T1-GE3 Datasheet
  • where to find SI6968BEDQ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI6968BEDQ-T1-GE3
  • SI6968BEDQ-T1-GE3 PDF Datasheet
  • SI6968BEDQ-T1-GE3 Stock

  • SI6968BEDQ-T1-GE3 Pinout
  • Datasheet SI6968BEDQ-T1-GE3
  • SI6968BEDQ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI6968BEDQ-T1-GE3 Price
  • SI6968BEDQ-T1-GE3 Distributor

SI6968BEDQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.2A
Rds On (Max) @ Id, Vgs22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

APTM120H57FT3G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

17A

Rds On (Max) @ Id, Vgs

684mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

187nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

5155pF @ 25V

Power - Max

390W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3

DMN2008LFU-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

14.5A

Rds On (Max) @ Id, Vgs

5.4mOhm @ 5.5A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1418pF @ 10V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UFDFN Exposed Pad

Supplier Device Package

U-DFN2030-6 (Type B)

DMN2019UTS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.4A

Rds On (Max) @ Id, Vgs

18.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

143pF @ 10V

Power - Max

780mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SP8M9FU6TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A, 5A

Rds On (Max) @ Id, Vgs

18mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

1190pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

FDME1024NZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.8A

Rds On (Max) @ Id, Vgs

66mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 10V

Power - Max

600mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UFDFN Exposed Pad

Supplier Device Package

6-MicroFET (1.6x1.6)

Recently Sold

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

MAX1681ESA

MAX1681ESA

Maxim Integrated

IC REG CHARGE PUMP INV 8SOIC

766161102GPTR13

766161102GPTR13

CTS Resistor Products

RES ARRAY 15 RES 1K OHM 16SOIC

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

RUEF500

RUEF500

Littelfuse

PTC RESET FUSE 30V 5A RADIAL

SMCJ5.0CA

SMCJ5.0CA

TVS DIODE 5V 9.2V DO214AB

FZT855TA

FZT855TA

Diodes Incorporated

TRANS NPN 150V 5A SOT-223

PIC18F1220-I/SO

PIC18F1220-I/SO

Microchip Technology

IC MCU 8BIT 4KB FLASH 18SOIC

NC7WZ04P6X

NC7WZ04P6X

ON Semiconductor

IC INVERTER 2CH 2-INP SC70-6

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23