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SI6968BEDQ-T1-GE3 Datasheet

SI6968BEDQ-T1-GE3 Datasheet
Total Pages: 11
Size: 227.98 KB
Vishay Siliconix
This datasheet covers 2 part numbers: SI6968BEDQ-T1-GE3, SI6968BEDQ-T1-E3
SI6968BEDQ-T1-GE3 Datasheet Page 1
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SI6968BEDQ-T1-GE3 Datasheet Page 11
SI6968BEDQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A

Rds On (Max) @ Id, Vgs

22mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

SI6968BEDQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A

Rds On (Max) @ Id, Vgs

22mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP