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SI6968BEDQ-T1-E3

SI6968BEDQ-T1-E3

For Reference Only

Part Number SI6968BEDQ-T1-E3
PNEDA Part # SI6968BEDQ-T1-E3
Description MOSFET 2N-CH 20V 5.2A 8TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6968BEDQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6968BEDQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6968BEDQ-T1-E3, SI6968BEDQ-T1-E3 Datasheet (Total Pages: 11, Size: 227.98 KB)
PDFSI6968BEDQ-T1-GE3 Datasheet Cover
SI6968BEDQ-T1-GE3 Datasheet Page 2 SI6968BEDQ-T1-GE3 Datasheet Page 3 SI6968BEDQ-T1-GE3 Datasheet Page 4 SI6968BEDQ-T1-GE3 Datasheet Page 5 SI6968BEDQ-T1-GE3 Datasheet Page 6 SI6968BEDQ-T1-GE3 Datasheet Page 7 SI6968BEDQ-T1-GE3 Datasheet Page 8 SI6968BEDQ-T1-GE3 Datasheet Page 9 SI6968BEDQ-T1-GE3 Datasheet Page 10 SI6968BEDQ-T1-GE3 Datasheet Page 11

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SI6968BEDQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.2A
Rds On (Max) @ Id, Vgs22mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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