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SI6562DQ-T1-E3

SI6562DQ-T1-E3

For Reference Only

Part Number SI6562DQ-T1-E3
PNEDA Part # SI6562DQ-T1-E3
Description MOSFET N/P-CH 20V 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6562DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6562DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6562DQ-T1-E3, SI6562DQ-T1-E3 Datasheet (Total Pages: 7, Size: 119.78 KB)
PDFSI6562DQ-T1-GE3 Datasheet Cover
SI6562DQ-T1-GE3 Datasheet Page 2 SI6562DQ-T1-GE3 Datasheet Page 3 SI6562DQ-T1-GE3 Datasheet Page 4 SI6562DQ-T1-GE3 Datasheet Page 5 SI6562DQ-T1-GE3 Datasheet Page 6 SI6562DQ-T1-GE3 Datasheet Page 7

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SI6562DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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