Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI6562DQ-T1-E3

SI6562DQ-T1-E3

For Reference Only

Part Number SI6562DQ-T1-E3
PNEDA Part # SI6562DQ-T1-E3
Description MOSFET N/P-CH 20V 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,950
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6562DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6562DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6562DQ-T1-E3, SI6562DQ-T1-E3 Datasheet (Total Pages: 7, Size: 119.78 KB)
PDFSI6562DQ-T1-GE3 Datasheet Cover
SI6562DQ-T1-GE3 Datasheet Page 2 SI6562DQ-T1-GE3 Datasheet Page 3 SI6562DQ-T1-GE3 Datasheet Page 4 SI6562DQ-T1-GE3 Datasheet Page 5 SI6562DQ-T1-GE3 Datasheet Page 6 SI6562DQ-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI6562DQ-T1-E3 Datasheet
  • where to find SI6562DQ-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI6562DQ-T1-E3
  • SI6562DQ-T1-E3 PDF Datasheet
  • SI6562DQ-T1-E3 Stock

  • SI6562DQ-T1-E3 Pinout
  • Datasheet SI6562DQ-T1-E3
  • SI6562DQ-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI6562DQ-T1-E3 Price
  • SI6562DQ-T1-E3 Distributor

SI6562DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

DI9942T

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.5A

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.6W

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

FDMS1D2N03DSD

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)

Rds On (Max) @ Id, Vgs

3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

2.5V @ 320µA, 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V, 117nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1410pF @ 15V, 4860pF @ 15V

Power - Max

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-PQFN (5x6)

APTC90H12SCTG

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

4 N-Channel (H-Bridge)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

30A

Rds On (Max) @ Id, Vgs

120mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP4

Supplier Device Package

SP4

NTLLD4951NFTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.5A, 6.3A

Rds On (Max) @ Id, Vgs

17.4mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

605pF @ 15V

Power - Max

800mW, 810mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerWDFN

Supplier Device Package

8-WDFN (3x3)

SQJB00EP-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

Automotive, AEC-Q101, TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

Power - Max

48W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

Recently Sold

MMSD4148T1G

MMSD4148T1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

LTM4623IY#PBF

LTM4623IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 3A

06035C104KAT2A

06035C104KAT2A

CAP CER 0.1UF 50V X7R 0603

NTGS5120PT1G

NTGS5120PT1G

ON Semiconductor

MOSFET P-CH 60V 1.8A 6-TSOP

MAX4162ESA+

MAX4162ESA+

Maxim Integrated

IC OPAMP GP 1 CIRCUIT 8SOIC

MAX232EJE

MAX232EJE

Maxim Integrated

MULTICHANNEL RS-232 DRIVERS/RECE

7447789002

7447789002

Wurth Electronics

FIXED IND 2.2UH 4.02A 23 MOHM

AD8044ARZ-14

AD8044ARZ-14

Analog Devices

IC OPAMP VFB 4 CIRCUIT 14SOIC

A42MX16-PQ160

A42MX16-PQ160

Microsemi

IC FPGA 125 I/O 160QFP

S2G-13-F

S2G-13-F

Diodes Incorporated

DIODE GEN PURP 400V 1.5A SMB

74LCX16373MTDX

74LCX16373MTDX

ON Semiconductor

IC LATCH TRANSP 16BIT LV 48TSSOP