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SI7123DN-T1-GE3

SI7123DN-T1-GE3

For Reference Only

Part Number SI7123DN-T1-GE3
PNEDA Part # SI7123DN-T1-GE3
Description MOSFET P-CH 20V 10.2A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 214,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7123DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7123DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7123DN-T1-GE3, SI7123DN-T1-GE3 Datasheet (Total Pages: 13, Size: 571.55 KB)
PDFSI7123DN-T1-GE3 Datasheet Cover
SI7123DN-T1-GE3 Datasheet Page 2 SI7123DN-T1-GE3 Datasheet Page 3 SI7123DN-T1-GE3 Datasheet Page 4 SI7123DN-T1-GE3 Datasheet Page 5 SI7123DN-T1-GE3 Datasheet Page 6 SI7123DN-T1-GE3 Datasheet Page 7 SI7123DN-T1-GE3 Datasheet Page 8 SI7123DN-T1-GE3 Datasheet Page 9 SI7123DN-T1-GE3 Datasheet Page 10 SI7123DN-T1-GE3 Datasheet Page 11

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SI7123DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs10.6mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3729pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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