Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7148DP-T1-GE3

SI7148DP-T1-GE3

For Reference Only

Part Number SI7148DP-T1-GE3
PNEDA Part # SI7148DP-T1-GE3
Description MOSFET N-CH 75V 28A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7148DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7148DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7148DP-T1-GE3, SI7148DP-T1-GE3 Datasheet (Total Pages: 14, Size: 305.68 KB)
PDFSI7148DP-T1-GE3 Datasheet Cover
SI7148DP-T1-GE3 Datasheet Page 2 SI7148DP-T1-GE3 Datasheet Page 3 SI7148DP-T1-GE3 Datasheet Page 4 SI7148DP-T1-GE3 Datasheet Page 5 SI7148DP-T1-GE3 Datasheet Page 6 SI7148DP-T1-GE3 Datasheet Page 7 SI7148DP-T1-GE3 Datasheet Page 8 SI7148DP-T1-GE3 Datasheet Page 9 SI7148DP-T1-GE3 Datasheet Page 10 SI7148DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7148DP-T1-GE3 Datasheet
  • where to find SI7148DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI7148DP-T1-GE3
  • SI7148DP-T1-GE3 PDF Datasheet
  • SI7148DP-T1-GE3 Stock

  • SI7148DP-T1-GE3 Pinout
  • Datasheet SI7148DP-T1-GE3
  • SI7148DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI7148DP-T1-GE3 Price
  • SI7148DP-T1-GE3 Distributor

SI7148DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 35V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

IRF7470TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3430pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRL3705ZS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 25V

FET Feature

-

Power Dissipation (Max)

130W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

10Ohm @ 800mA, 0V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

645pF @ 10V

FET Feature

Depletion Mode

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263HV

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TSM150P04LCS RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2783pF @ 20V

FET Feature

-

Power Dissipation (Max)

12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

DMP2040UVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

MAX31785ETL+T

MAX31785ETL+T

Maxim Integrated

IC MOTOR DRIVER 2.7V-5.5V 40TQFN

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

LTM8074IY#PBF

LTM8074IY#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 1.2A 25BGA

MBR0540T1G

MBR0540T1G

ON Semiconductor

DIODE SCHOTTKY 40V 500MA SOD123

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

ADG5421BCPZ-RL7

ADG5421BCPZ-RL7

Analog Devices

IC SWITCH SPST DUAL 10LFCSP

LH1511BAB

LH1511BAB

Vishay Semiconductor Opto Division

SSR RELAY SPST-NC 200MA 0-200V

FDS6680A

FDS6680A

ON Semiconductor

MOSFET N-CH 30V 12.5A 8-SOIC

IXBT12N300HV

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268

SI1865DDL-T1-GE3

SI1865DDL-T1-GE3

Vishay Siliconix

IC LOAD SW LVL SHIFT SC70-6

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR