SI7160DP-T1-E3
For Reference Only
| Part Number | SI7160DP-T1-E3 |
| PNEDA Part # | SI7160DP-T1-E3 |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,384 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7160DP-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7160DP-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7160DP-T1-E3 Datasheet
- where to find SI7160DP-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI7160DP-T1-E3
- SI7160DP-T1-E3 PDF Datasheet
- SI7160DP-T1-E3 Stock
- SI7160DP-T1-E3 Pinout
- Datasheet SI7160DP-T1-E3
- SI7160DP-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI7160DP-T1-E3 Price
- SI7160DP-T1-E3 Distributor
SI7160DP-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 2970pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 27.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series π-MOSV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V Rds On (Max) @ Id, Vgs 300mOhm @ 1A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 10V FET Feature - Power Dissipation (Max) 800mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UFM Package / Case 3-SMD, Flat Leads |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 12V FET Feature - Power Dissipation (Max) 2.5W (Ta), 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-5 Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 33µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1711pF @ 25V FET Feature - Power Dissipation (Max) 72W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series LITTLE FOOT® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 94mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 355pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Dual Package / Case PowerPAK® SC-70-6 Dual |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 70A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1215pF @ 20V FET Feature - Power Dissipation (Max) 74W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
