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SI7232DN-T1-GE3

SI7232DN-T1-GE3 SI7232DN-T1-GE3

For Reference Only

Part Number SI7232DN-T1-GE3
PNEDA Part # SI7232DN-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 20V 25A PPAK 1212-8
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 568,332
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Oct 23 - Oct 28 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI7232DN-T1-GE3 Resources

Brand Vishay Siliconix
Mfr. Part NumberSI7232DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7232DN-T1-GE3, SI7232DN-T1-GE3 Datasheet (Total Pages: 13, Size: 639.93 KB)
PDFSI7232DN-T1-GE3 Datasheet Cover
SI7232DN-T1-GE3 Datasheet Page 2 SI7232DN-T1-GE3 Datasheet Page 3 SI7232DN-T1-GE3 Datasheet Page 4 SI7232DN-T1-GE3 Datasheet Page 5 SI7232DN-T1-GE3 Datasheet Page 6 SI7232DN-T1-GE3 Datasheet Page 7 SI7232DN-T1-GE3 Datasheet Page 8 SI7232DN-T1-GE3 Datasheet Page 9 SI7232DN-T1-GE3 Datasheet Page 10 SI7232DN-T1-GE3 Datasheet Page 11

SI7232DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C25A
Rds On (Max) @ Id, Vgs16.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds1220pF @ 10V
Power - Max23W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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