SI7872DP-T1-GE3
For Reference Only
| Part Number | SI7872DP-T1-GE3 |
| PNEDA Part # | SI7872DP-T1-GE3 |
| Description | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,748 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7872DP-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7872DP-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7872DP-T1-GE3 Datasheet
- where to find SI7872DP-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI7872DP-T1-GE3
- SI7872DP-T1-GE3 PDF Datasheet
- SI7872DP-T1-GE3 Stock
- SI7872DP-T1-GE3 Pinout
- Datasheet SI7872DP-T1-GE3
- SI7872DP-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI7872DP-T1-GE3 Price
- SI7872DP-T1-GE3 Distributor
SI7872DP-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | LITTLE FOOT® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.4A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.92A Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V Power - Max 730mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Rds On (Max) @ Id, Vgs 55mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 910pF @ 24V Power - Max 2.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 180mA, 145mA Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id 400mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 50V Current - Continuous Drain (Id) @ 25°C 2A Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V Power - Max 2W Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Infineon Technologies Series CoolSiC™+ FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 50A (Tj) Rds On (Max) @ Id, Vgs 22.5mOhm @ 50A, 15V Vgs(th) (Max) @ Id 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 3680pF @ 800V Power - Max 20mW Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package AG-EASY1BM-2 |
