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SI8447DB-T2-E1

SI8447DB-T2-E1

For Reference Only

Part Number SI8447DB-T2-E1
PNEDA Part # SI8447DB-T2-E1
Description MOSFET P-CH 20V 11A MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8447DB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8447DB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8447DB-T2-E1, SI8447DB-T2-E1 Datasheet (Total Pages: 9, Size: 117.76 KB)
PDFSI8447DB-T2-E1 Datasheet Cover
SI8447DB-T2-E1 Datasheet Page 2 SI8447DB-T2-E1 Datasheet Page 3 SI8447DB-T2-E1 Datasheet Page 4 SI8447DB-T2-E1 Datasheet Page 5 SI8447DB-T2-E1 Datasheet Page 6 SI8447DB-T2-E1 Datasheet Page 7 SI8447DB-T2-E1 Datasheet Page 8 SI8447DB-T2-E1 Datasheet Page 9

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SI8447DB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.7V, 4.5V
Rds On (Max) @ Id, Vgs75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 10V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-Micro Foot™ (1.5x1)
Package / Case6-UFBGA

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