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SI8481DB-T1-E1

SI8481DB-T1-E1

For Reference Only

Part Number SI8481DB-T1-E1
PNEDA Part # SI8481DB-T1-E1
Description MOSFET P-CH 20V 9.7A 4-MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8481DB-T1-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8481DB-T1-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8481DB-T1-E1, SI8481DB-T1-E1 Datasheet (Total Pages: 7, Size: 154.3 KB)
PDFSI8481DB-T1-E1 Datasheet Cover
SI8481DB-T1-E1 Datasheet Page 2 SI8481DB-T1-E1 Datasheet Page 3 SI8481DB-T1-E1 Datasheet Page 4 SI8481DB-T1-E1 Datasheet Page 5 SI8481DB-T1-E1 Datasheet Page 6 SI8481DB-T1-E1 Datasheet Page 7

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SI8481DB-T1-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 10V
FET Feature-
Power Dissipation (Max)2.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-MICRO FOOT® (1.6x1.6)
Package / Case4-UFBGA

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