Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA400EDJ-T1-GE3

SIA400EDJ-T1-GE3

For Reference Only

Part Number SIA400EDJ-T1-GE3
PNEDA Part # SIA400EDJ-T1-GE3
Description MOSFET N-CH 30V 12A SC-70
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 13 - May 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA400EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA400EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA400EDJ-T1-GE3, SIA400EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 214.12 KB)
PDFSIA400EDJ-T1-GE3 Datasheet Cover
SIA400EDJ-T1-GE3 Datasheet Page 2 SIA400EDJ-T1-GE3 Datasheet Page 3 SIA400EDJ-T1-GE3 Datasheet Page 4 SIA400EDJ-T1-GE3 Datasheet Page 5 SIA400EDJ-T1-GE3 Datasheet Page 6 SIA400EDJ-T1-GE3 Datasheet Page 7 SIA400EDJ-T1-GE3 Datasheet Page 8 SIA400EDJ-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA400EDJ-T1-GE3 Datasheet
  • where to find SIA400EDJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA400EDJ-T1-GE3
  • SIA400EDJ-T1-GE3 PDF Datasheet
  • SIA400EDJ-T1-GE3 Stock

  • SIA400EDJ-T1-GE3 Pinout
  • Datasheet SIA400EDJ-T1-GE3
  • SIA400EDJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA400EDJ-T1-GE3 Price
  • SIA400EDJ-T1-GE3 Distributor

SIA400EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs19mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1265pF @ 15V
FET Feature-
Power Dissipation (Max)19.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

The Products You May Be Interested In

FDS2572

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

4.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

47mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

Manufacturer

IXYS

Series

HiperFET™, TrenchT3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

270A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12600pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

RQ1A070ZPTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

12mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 6V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT8

Package / Case

8-SMD, Flat Lead

IRLS4030PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.3mOhm @ 110A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

11360pF @ 50V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

33mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

224nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA

Recently Sold

LTM8074IY#PBF

LTM8074IY#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 1.2A 25BGA

TPSC107K010R0200

TPSC107K010R0200

CAP TANT 100UF 10% 10V 2312

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC

VLCF4020T-2R2N1R7

VLCF4020T-2R2N1R7

TDK

FIXED IND 2.2UH 1.72A 59 MOHM

TAJA475K016RNJ

TAJA475K016RNJ

CAP TANT 4.7UF 10% 16V 1206

F55J25R

F55J25R

Ohmite

RES CHAS MNT 25 OHM 5% 55W

ESD9L3.3ST5G

ESD9L3.3ST5G

ON Semiconductor

TVS DIODE 3.3V 9V SOD923

RK7002BMT116

RK7002BMT116

Rohm Semiconductor

MOSFET N-CH 60V 0.25A SST3

0466.250NR

0466.250NR

Littelfuse

FUSE BOARD MNT 250MA 125VAC/VDC

DG9414DQ-T1-E3

DG9414DQ-T1-E3

Vishay Siliconix

IC MULTIPLEXER DUAL 4X1 10MSOP

WSL25125L000FTA

WSL25125L000FTA

Vishay Dale

WSL-2512 .005 1% R86