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SIA416DJ-T1-GE3

SIA416DJ-T1-GE3

For Reference Only

Part Number SIA416DJ-T1-GE3
PNEDA Part # SIA416DJ-T1-GE3
Description MOSFET N-CH 100V 11.3A SC70-6L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,334
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA416DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA416DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA416DJ-T1-GE3, SIA416DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 214.48 KB)
PDFSIA416DJ-T1-GE3 Datasheet Cover
SIA416DJ-T1-GE3 Datasheet Page 2 SIA416DJ-T1-GE3 Datasheet Page 3 SIA416DJ-T1-GE3 Datasheet Page 4 SIA416DJ-T1-GE3 Datasheet Page 5 SIA416DJ-T1-GE3 Datasheet Page 6 SIA416DJ-T1-GE3 Datasheet Page 7 SIA416DJ-T1-GE3 Datasheet Page 8 SIA416DJ-T1-GE3 Datasheet Page 9

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SIA416DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds295pF @ 50V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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