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SIA426DJ-T1-GE3

SIA426DJ-T1-GE3

For Reference Only

Part Number SIA426DJ-T1-GE3
PNEDA Part # SIA426DJ-T1-GE3
Description MOSFET N-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA426DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA426DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA426DJ-T1-GE3, SIA426DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 222.35 KB)
PDFSIA426DJ-T1-GE3 Datasheet Cover
SIA426DJ-T1-GE3 Datasheet Page 2 SIA426DJ-T1-GE3 Datasheet Page 3 SIA426DJ-T1-GE3 Datasheet Page 4 SIA426DJ-T1-GE3 Datasheet Page 5 SIA426DJ-T1-GE3 Datasheet Page 6 SIA426DJ-T1-GE3 Datasheet Page 7 SIA426DJ-T1-GE3 Datasheet Page 8 SIA426DJ-T1-GE3 Datasheet Page 9

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SIA426DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs23.6mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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