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SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

For Reference Only

Part Number SIA456DJ-T1-GE3
PNEDA Part # SIA456DJ-T1-GE3
Description MOSFET N-CH 200V 2.6A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA456DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA456DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA456DJ-T1-GE3, SIA456DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 201.8 KB)
PDFSIA456DJ-T1-GE3 Datasheet Cover
SIA456DJ-T1-GE3 Datasheet Page 2 SIA456DJ-T1-GE3 Datasheet Page 3 SIA456DJ-T1-GE3 Datasheet Page 4 SIA456DJ-T1-GE3 Datasheet Page 5 SIA456DJ-T1-GE3 Datasheet Page 6 SIA456DJ-T1-GE3 Datasheet Page 7 SIA456DJ-T1-GE3 Datasheet Page 8 SIA456DJ-T1-GE3 Datasheet Page 9

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SIA456DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.5nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 100V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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