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SIB912DK-T1-GE3

SIB912DK-T1-GE3

For Reference Only

Part Number SIB912DK-T1-GE3
PNEDA Part # SIB912DK-T1-GE3
Description MOSFET 2N-CH 20V 1.5A SC-75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB912DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB912DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIB912DK-T1-GE3, SIB912DK-T1-GE3 Datasheet (Total Pages: 9, Size: 231.86 KB)
PDFSIB912DK-T1-GE3 Datasheet Cover
SIB912DK-T1-GE3 Datasheet Page 2 SIB912DK-T1-GE3 Datasheet Page 3 SIB912DK-T1-GE3 Datasheet Page 4 SIB912DK-T1-GE3 Datasheet Page 5 SIB912DK-T1-GE3 Datasheet Page 6 SIB912DK-T1-GE3 Datasheet Page 7 SIB912DK-T1-GE3 Datasheet Page 8 SIB912DK-T1-GE3 Datasheet Page 9

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SIB912DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A
Rds On (Max) @ Id, Vgs216mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds95pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L Dual
Supplier Device PackagePowerPAK® SC-75-6L Dual

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