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SIE802DF-T1-GE3

SIE802DF-T1-GE3

For Reference Only

Part Number SIE802DF-T1-GE3
PNEDA Part # SIE802DF-T1-GE3
Description MOSFET N-CH 30V 60A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,898
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE802DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE802DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE802DF-T1-GE3, SIE802DF-T1-GE3 Datasheet (Total Pages: 10, Size: 191.73 KB)
PDFSIE802DF-T1-GE3 Datasheet Cover
SIE802DF-T1-GE3 Datasheet Page 2 SIE802DF-T1-GE3 Datasheet Page 3 SIE802DF-T1-GE3 Datasheet Page 4 SIE802DF-T1-GE3 Datasheet Page 5 SIE802DF-T1-GE3 Datasheet Page 6 SIE802DF-T1-GE3 Datasheet Page 7 SIE802DF-T1-GE3 Datasheet Page 8 SIE802DF-T1-GE3 Datasheet Page 9 SIE802DF-T1-GE3 Datasheet Page 10

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SIE802DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 23.6A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs160nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7000pF @ 15V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

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